نتایج جستجو برای: ballistic transport

تعداد نتایج: 278608  

Journal: :Nature nanotechnology 2008
Xu Du Ivan Skachko Anthony Barker Eva Y Andrei

The discovery of graphene raises the prospect of a new class of nanoelectronic devices based on the extraordinary physical properties of this one-atom-thick layer of carbon. Unlike two-dimensional electron layers in semiconductors, where the charge carriers become immobile at low densities, the carrier mobility in graphene can remain high, even when their density vanishes at the Dirac point. Ho...

Journal: :Physical review letters 2005
H J Li W G Lu J J Li X D Bai C Z Gu

The electric transport properties of an individual vertical multiwall carbon nanotube (MWCNT) were studied in situ at room temperature in a scanning electron microscope chamber. It was found that the single MWCNT has a large current-carrying capacity, and the maximum current can reach 7.27 mA. At the same time, a very low resistance of about 34.4 ohms and a high conductance of about (460-490)G0...

Journal: :Physical review. B, Condensed matter 1994
Domínguez-Adame Sánchez Diez

We theoretically study electron transport in disordered, quantum-well based, semiconductor superlattices with structural short-range correlations. Our system consists of equal width square barriers and quantum wells with two different thicknesses. The two kinds of quantum wells are randomly distributed along the growth direction. Structural correlations are introduced by adding the constraint t...

2014
Walter A. de Heer John Hankinson Claire Berger Bernat Terres Alexander Epping Tymofiy Khodkov Kenji Watanabe Takashi Taniguchi Bernd Beschoten Christoph Stampfer Farhad Karimi

Graphene nanoribbons are essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about 10 nanometers between scattering events, resulting in minimum sheet resistances of about 1 kW In contrast 40 nm wide graphene nanoribbons that are epitaxially grown on silicon carbide...

Journal: :The International Conference on Electrical Engineering 2010

Journal: :Journal of Physics: Condensed Matter 2005

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