We report an investigation of In,,,GacJ, As/AlAs resonant tunneling diodes designed for high speed switching applications. Experimental peak current densities are observed to increase with decreasing AlAs barrier thicknesses, in good agreement with a two band tunneling calculation, which includes the effects of strain and band bending. Swing voltages over the range OS-l.0 V are demonstrated to ...

Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current into the dielectric, resulting in its degradation. Since band offsets for SiC to most dielectrics are smaller than those with respect to Si, a ...

It is shown that superluminal optical signaling is possible without violating Lorentz invariance and causality via tunneling through photonic band gaps in inhomogeneous dielectrics of a special kind.

in recent years, sub-band speech recognition has been found useful in addressing the need for robustness in speech recognition, especially for the speech contaminated by band-limited noise. in sub-band speech recognition, the full band speech is divided into several frequency sub-bands, with the result of the recognition task given by the combination of the sub-band feature vectors or their lik...

We have fabricated and measured low barrier (30-150 meV) Schottky diodes using n+InGaAs/nGaAs pseudomorphic structures with up to 1.5% lattice mismatch. The I-V measurements at temperatures from 4 to 200 K show rectifying behavior and indicate transport mechanisms which range from tunneling to thermionic emission. The transport properties and barrier height determinations indicate that the band...

We report on the realization of a multiorbital system with ultracold atoms in the excited bands of a 3D optical lattice by selectively controlling the band population along a given lattice direction. The lifetime of the atoms in the excited band is found to be considerably longer (10-100 times) than the characteristic time scale for intersite tunneling, thus opening the path for orbital selecti...

In this paper, a novel technique for the design of two-channel Quadrature Mirror Filter (QMF) banks with linear phase in frequency domain is presented. To satisfy the exact reconstruction condition of the filter bank, low-pass prototype filter response in pass-band, transition band and stop band is optimized using unconstrained indirect update optimization method. The objective function is form...

Bloch oscillations are a powerful tool to investigate spectra with Dirac points. By varying band parameters, Dirac points can be manipulated and merged at a topological transition toward a gapped phase. Under a constant force, a Fermi sea initially in the lower band performs Bloch oscillations and may Zener tunnel to the upper band mostly at the location of the Dirac points. The tunneling proba...

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ∼6 times the nanotube band gap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with ga...

We propose a two band model for superconductivity. It turns out that the simplest nontrivial case considers solely interband scattering, and both bands can be modeled as symmetric (around the Fermi level) and flat, thus each band is completely characterized by its half-band width Wn (n=1,2). A useful dimensionless parameter is δ, proportional to W2−W1. The case δ = 0 retrieves the conventional ...