نتایج جستجو برای: bicmos
تعداد نتایج: 644 فیلتر نتایج به سال:
This paper describes calibration techniques for downconversion mixers used in integrated direct-conversion receivers. A method of achieving a high even-order intermodulation rejection is presented. Using the method presented, the receiver second-order input intercept point (IIP2) can always be improved by more than 20 dB. The minimum achieved receiver IIP2 after calibration is +38 dBm. A techni...
This paper reports on the design of an integrated transceiver that supports SINCGARS (Single Channel Ground-Airborne Radio System). Utilizing both transistors and microelectromechanical systems (MEMS), the circuit transmits preprocessed discrete-time baseband data and receives RF passband signals that are mixed to 100kHz and sampled by a fast ADC for off-chip demodulation. By using micromechan...
Purpose – The demand for higher bandwidth has resulted in the development of mm-wave phased array systems. This paper explores a technique that could be used to feed the individual antennas in a mm-wave phased array system with the appropriate phase shifted signal, to achieve required directivity. It presents differential Colpitts oscillators at 5 GHz and 60 GHz that can provide differential ou...
The paper presents a fully differential log-domain low-pass second order filter. The topology was derived, using a LINELIN transformation, from a standard state-variable biquad. The filter allow for orthogonal parameter tuning. Its low-frequency gain (H0), natural pulsation (ω0) and quality factor (Q) can be tuned continuously by varying only DC bias currents. The filter was implemented in a ge...
The techniques normally used for generating pulses in low-cost monolithic technology (CMOS or BiCMOS) are different from those usually used in hybrid technologies. The latter mainly use edge combination methods generated from SRD diodes via quarter-wave lines or stubs (Jeongwoo Han et al., 2004). In a low-cost context, these techniques are not possible, as they cannot be integrated into the des...
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology,...
Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with a full Tx integration is that each Tx building block uses different technology. A power-detection circuit will exploit the Schottky diode, while the modulator IC is integrated with BiCMOS or SiGe. Likewise, the digital control loop is implemented in CMOS. Now that directco...
This paper presents an alternative configuration for realizing a canonical voltage-mode first-order allpass (AP) section with electronic tuning. The proposed circuit is composed of only one CCCTA and one floating capacitor, which results in a simple and resistorless structure. Its phase response can be adjusted electronically through the external dc bias currents of the CCCTA. Simulation result...
An ultra-wideband impulse receiver capable of detecting sub-200psec pulses is presented. The chip detects a specific zero-crossing of an incoming pulse and mitigates the undesired effects of ringing. The time detection sensitivity of the chip is limited by the jitter of the incoming pulse rather than the pulse width. A mean RMS jitter of 94fsec is recorded, which translates to the localization ...
We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 μm BiCMOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of co...
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