نتایج جستجو برای: bilayer graphene
تعداد نتایج: 65063 فیلتر نتایج به سال:
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a twodimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p ! p asymmetry due to trigonal warping, which suppresses the weak localization effect. We ...
We consider the interplay between the antiferromagnetic and Kekulé valence bond solid orderings in the zero energy Landau levels of neutral monolayer and bilayer graphene. We establish the presence of Wess-Zumino-Witten terms between these orders: this implies that their quantum fluctuations are described by the deconfined critical theories of quantum spin systems. We present implications for e...
The Young's modulus of graphene is estimated by measuring the strain applied by a pressure difference across graphene membranes using Raman spectroscopy. The strain induced on pressurized graphene balloons can be estimated directly from the peak shift of the Raman G band. By comparing the measured strain with numerical simulation, we obtained the Young's modulus of graphene. The estimated Young...
The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities (greater than 10(6) square centimers per volt-second). Bilayer graphene is a truly two-dimensional material with complex chiral...
This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration w...
We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer...
The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene, we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap Δ induced by the application o...
Stable ink containing highly dispersed graphene nanosheets (GNSs) for inkjet printing on polyimide (PI) film has been successfully prepared by the adsorption of sodium n-dodecyl sulphate (SDS) and adjusting the pH value to 10 by ammonia. Conductive features on a flexible PI film were fabricated by inkjet printing the stable ink directly on a substrate. With higher number of printing cycles, the...
J. Huang,1 J. A. Alexander-Webber,1 A. M. R. Baker,1 T. J. B. M. Janssen,2 A. Tzalenchuk,2,3 V. Antonov,3 T. Yager,4 S. Lara-Avila,4 S. Kubatkin,4 R. Yakimova,5 and R. J. Nicholas1,* 1Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom 2National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom 3Department of Physics...
We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interactioninduced gap, which is tunable via an external gate voltage Vg. In contrast to the...
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