We have characterized glass-glass and glass-Si bonding processes for the fabrication of wide, shallow nanofluidic channels with depths down to the nanometer scale. Nanochannels on glass or Si substrate are formed by reactive ion etching or a wet etching process, and are sealed with another flat substrate either by glass-glass fusion bonding (550 degrees C) or an anodic bonding process. We demon...

In order to digitally control the bonding force of a wire bonder precisely, this paper uses a DC solenoid as a force source, and by controlling the solenoid’s current, which causes the electromagnetic force, we can control the bonding force that capillary applies. The bonding force control system in this paper is composed of PC (Personal Computer) and hypogyny MCU (Micro Controller Unit), which...

Introduction: This study evaluated microleakage of flowable and conventional composite in primary molar class II restorations using self-etch and total-etch bonding agents. Methods: Class II standard cavities were prepared on proximal surface of 48 primary molars. These cavities were restored using GrandioFlow and Grandio composites and Futurabond DC and Solobo...

In this paper, the development of wafer bonding techniques of the most frequently used materials Si-to-glass, glass-to-glass and Si-to-Si is reported. To improve the bond quality of Si-to-glass and make glass-to-glass bonding viable at bonding temperatures less than 300 C, a hydrogen-free amorphous silicon layer of 20-100 nm thickness is deposited as an intermediate layer. For Si-to-glass bondi...

An anisotropic conductive adhesive (ACA) bump was produced on a silicon chip for bonding onto a glass substrate. The bumping process and the bonding procedure are described. The constituents of the ACA were investigated with a scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). The thermal behavior of the ACA was investigated with differential scanning calorimetry (DSC)...

This article discusses a method of wafer-to-wafer bonding using metallic copper as the bonding medium. This method is commonly known as thermo-compression bonding. Bonding process is described and characterization results are presented. Reliability issues related to voids formation in the bonded layer is discussed. A survey on progress of copper-based wafer bonding and its application for 3-D I...

The judgment of metal rod buffer system bonding quality depends on the bond of the metal rods with the surrounding medium. System bonding area will lead to different reflection amplitude. Compared the simulation with the experiment, it can be concluded that different bonding area can measure bond quality, i.e, the greater the bonding area is the more excellent bonding quality will be. This conc...

An array of inverted InGaAs metal–semiconductor–metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In–Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 mm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM me...