In order to study the failure mechanism of high-voltage cable buffer layer caused by moisture and performance material after immersion drying, according structure size 110 kV XLPE cable, requirements for separation distance between corrugated aluminum sheath insulating outer shield before change resistivity were calculated, influence on ablation was analyzed. The test platform built, properties...

We have studied the photoreflectance (PR) spectra from a MBE grown heterostructure consisting of 200 nm of Gao.s3A10.~7As, a 800 nm GaAs buffer layer on a semi-insulating (100) LEC GaAs substrate. By varying both the pump beam wavelength and modulation frequency (up to 100 kHz) we are able to identify the component layers, their quality and the properties of the various interfaces. In this stud...

Thermal decomposition of SiC has been used for the fabrication of high quality monolayer graphene and graphene nanoribbons on semi-insulating substrates. In this work, we propose a selective oxygen etching method to remove buffer layers on SiC surfaces that are connected to monolayer graphene formed from step edges. A thermal treatment in an extreme low partial pressure oxygen diluted by argon ...