Charge-Based Capacitance Measurement (CBCM) technique is a simple but effective for measuring capacitance values down to the attofarad level. However, when adopted fully on-chip implementation, this suffers output offset caused by mismatches and process variations. This paper introduces novel method that compensates of integrated differential CBCM electronic front-end. After detailed theoretica...

Developing nanoscale electrical characterization techniques adapted to three-dimensional (3D) geometry is essential for optimization of the epitaxial structure and doping process nano- microwires. In this paper, we demonstrate assessment depletion width as well profile at individual microwire core–shell light-emitting devices by capacitance–voltage measurements. A statistical study carried out ...

Abstract In this paper, the front-end circuit of a capacitance wire-mesh sensor (WMS) is analyzed in detail and new methodology to tune its feedback gains reported. This allows, for first time, WMS be able provide linear measurements multiphase fluids with electrical conductivity greater than 100

An instrumental method is described that enables real-time measurement of in-plane anisotropic liquid absorption in nonwoven fabrics. The system uses variations in electrical capacitance to monitor changes in the liquid absorbed by a fabric as a function of time. In the computer-integrated system, multiple capacitance transducers are arranged equidistantly around a central point to allow separa...

Charge-Base Capacitance Measurement (CBCM) techniques provide a simple way for measuring the overall parasitic capacitance of on-chip interconnects [1]. However, CBCM suffers from charge injection that limits its accuracy and sensitivity. In this paper we provide extensive simulation and experimental results showing that the effects of charge injection cannot be neglected, nor completely compen...

This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance–voltage (C–V) characteristics at high reverse bias voltage. High voltage bias application has not been possible by conventional measurement instrumentation. The authors, therefore, develop C–V characteristics measurement instrumentation which enables the application of high dc bias voltage...

− A numerical model of a general purpose commercial equipment for current versus voltage (I-V) and differential capacitance versus voltage (C-V) measurement of active devices is presented. The good agreement between the model results and experimental data show that the model takes into account the main error sources of the instrument and can be used as a base to perform error correction and to ...

Capacitance measurements, widely used to characterize numerous semiconductor properties, have been recently adopted to characterize organic photovoltaic (OPV) devices. It is known that certain challenges are associated with capacitance measurements. Of upmost importance is the employment of a proper measurement model (series or parallel). Owing to larger capacitive impedances and low series res...