We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in pro...

PURPOSE The goal of this in vitro study was to identify the topographical features of the enamel surface deproteinized and etched with phosphoric acid (H3PO4) compared to phosphoric acid alone. MATERIALS AND METHOD Ten extracted lower first and second permanent molars were polished with pumice and water, and then divided into 4 equal buccal sections having similar physical and chemical proper...

Many potential applications of porous silicon nanowires (SiNWs) fabricated with metal-assisted chemical etching are highly dependent on the precise control of morphology for device optimization. However, the effects of key etching parameters, such as the amount of deposited metal catalyst, HF-oxidant molar ratio (χ), and solvent concentration, on the morphology and etching kinetics of the SiNWs...

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectroni...

A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-ass...

Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...

Abstract The effect of the etching solution concentration on profile vertical microscale holes formed a Si(100) substrate by metal-assisted chemical (MacEtch) was investigated. MacEtch performed at different ratios (characterized their molar ratio <mml:math xmlns:mml="http://www.w3.org/1998/Math/Mat...

14 The development and status of what is commonly called the Gerischer mechanism of silicon etching in 15 fluoride solutions is reviewed. The two most widely used and studied wet etchants of silicon are F 16 and OH . Their mechanisms of atom removal share many things in common; in particular, chemical pas17 sivation by a hydrogen-terminated surface plays an important role in both. Crucially, ho...