We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-tempe...

A switched-current integrated circuit, which realizes the chaotic neuron model, is presented. The circuit mainly consists of CMOS inverters that are used as transconductance amplifiers and nonlinear elements. The chip was fabricated using a 1.2 μm HP CMOS process. A single neuron cell occupies only 0.0076 mm2, which represents an area smaller than the one occupied by a standard bonding pad. The...

Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conve...

Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze food selection, semiconductor detection, and atmospheric pollutant detection. Over past several decades, CMOS integrated circuits modified by traditional bulk materials as sensitivity sensors for...

The Spatially Modulated Light CMOS detector (SML CMOS detector) has taken away the conventional speed limit linked with photodetectors implemented in standard CMOS technology [1-3]. High-speed light detectors can be integrated with the CMOS receiver circuitry on the same silicon wafer without the usage of hybrid technology nor additional process steps. This indicates that the SML-detector will ...

Memristors show great potential for being integrated into CMOS technology and provide new approaches designing computing-in-memory (CIM) systems, brain-inspired applications, trimming circuits other topologies the beyond-CMOS era. A crucial characteristic of memristor is multi-state (also often referred as multibit, multi-level) switching. are capable representing information in an ultra-compac...

complementary metal-oxide semiconductor (cmos) technology has been the industry standard to implement very large scale integrated (vlsi) devices for the last two decades. due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. quantum-dot cellular...

The continuous scaling of CMOS circuits has set the MOSFET transistor in the nanoelectronic era. In this context, the functionality and complexity of integrated circuits (ICs) are growing up. However, the operation voltage has been continuously reduced. The higher complexity of ICs has allowed including electronic systems in a lot of safety critical applications (i.e., automotive, aeronautics a...

In this review paper different design techniques of multi bit adder are deliberate using linear parameters logic gates. The comparison is carried by several parameter mainly focus on a number of linear threshold gates, a number of CMOS transistor, power dissipation, power delay product (PDP), average power dissipation time delay and size of the full adder circuit. Adder circuits basically imple...

An Arithmetic logic Unit (ALU) is an integral part of a computer processor. It has the capability of performing a no. of different arithmetic and logic operations such as addition, subtraction, bit-shifts and magnitude comparison. ALUs of various bit-widths are frequently required in very large-scale integrated circuits (VLSI) from processors to application specific integrated circuits (ASICs)....