Rights: © 1995 American Physical Society (APS). This is the accepted version of the following article: Alatalo, M. & Kauppinen, H. & Saarinen, K. & Puska, M. J. & Mäkinen, J. & Hautojärvi, P. & Nieminen, Risto M. 1995. Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP. Physical Review B. Volume 51, Issue 7. 4176-4185. ISSN 1550-235X (...

We present a review of industrial heterostructure devices based on SiGe/Si and III–V compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed. Results from two-dimensional hydrodynamic analyses of heterojunction bipolar transistors (HBTs) are presented in good agreement w...

Nowadays semiconductor disk lasers are of great importance in virtue of their high output power. In fact, it is common to fabricate devices having an output power of several watts [1, 2]. Furthermore, the free access of the resonator allows intracavity SHG (second harmonic generation) using nonlinear crystals. In this way, the range of emission wavelengths that can be realized using different c...

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to ...

In recent papers [1] and [3-5], we have developed a computational model for the constants of motion of atomic and molecular systems, based on the wave properties of such systems. Our calculation is strongly simplified, compared to the conventional methods, because the wave model avoids the direct calculation of the wave function. We have presented in [2] a calculation method for the nonlinear s...

A density-functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density-functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V ...

Considerable effort was spent on our two-dimensional device simulator MINIMOS-NT to get it ready for simulation of devices with high complexity in respect to materials, geometries, etc. Many of the existing physical models (band gap, mobility, thermal conductivity, energy relaxation times, specific heat, etc.) were refined, some of them were replaced by promising new ones, and many new models w...

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaS...

Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism,...