The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (...

The extraordinary properties demonstrated for graphene and graphene-related materials can be fully exploited when a large-scale fabrication procedure is made available. Chemical vapor deposition (CVD) of graphene on Cu and Ni substrates is one of the most promising procedures to synthesize large-area and good quality graphene films. Parallel to the fabrication process, a large-scale quality mon...

Graphene has become a remarkable highlight of advanced material research because its far superior properties compared to other materials. Chemical vapor deposition (CVD) emerged as an essential method for scalable production and large area graphene various applications. Various carbon precursors have been reported they can dramatically impact the growth yield. In early years CVD growth, hydroca...

A numerical model was developed and used to study the near-surface gas-phase chemistry during atmospheric-pressure radiofrequency (RF) plasma diamond chemical vapor deposition (CVD). Model predictions of the mole fractions of CH4, 22 24 and 26 agree well with gas chromatograph measurements of those species over a broad range of operating conditions. The numerical model includes a two-dimensiona...

Background and Objective: Cardiovascular diseases (CVDs) are the most common chronic diseases and the leading cause of death in the world and in Iran. The aim of this study was to explore the geographical epidemiology of CVDs in the province of Zanjan, Iran.  Materials and Methods: This cross-sectional study was carried out at Zanjan University of Medical Sciences. Patients with adischarge dia...

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

Japan Several patterned growth techniques of single-walled carbon nanotubes (SWNTs) by modifing the dip-coating process are discussed. The conventional concept of using SiO2 patterned Si substrates to selectively grow 3D carbon nanotube structures can be applied to a dip-coating method followd by alcohol CVD growth. High-quality vertically aligned single-walled carbon nanotube (SWNT) patterns c...

Intrauterine growth restriction (IUGR) is a fetal pathology which leads to increased risk for certain neonatal complications. Furthermore, clinical and experimental studies revealed that IUGR is associated with a significantly higher incidence of metabolic, renal and cardiovascular diseases (CVD) later in life. One hypothesis for the higher risk of CVD after IUGR postulates that IUGR induces me...