Radio-frequency ~rf! inductively coupled planar plasma ~ICP! provides a better way to generate spatially confined high density gas discharge plasmas for microelectronics processing. Commercial processing equipment using this technique is currently available, but is limited in size to 20 cm in diameter by problems with plasma uniformity and antenna dielectric window erosion. We have developed a ...

We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...

Various electrode reaction rate boundary conditions suitable for mean-field Poisson-Nernst-Planck (PNP) mobile charge frequency response continuum models are defined and incorporated in the resulting Chang-Jaffe (CJ) CJPNP model, the ohmic OHPNP one, and a simplified GPNP one in order to generalize from full to partial blocking of mobile charges at the two plane parallel electrodes. Model respo...

A unified approach, particularly suitable for evaluation of high-k stack structures, is presented. This approach is based on fully selfconsistent solutions to the Schrödinger and Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The present approach is capable of modeling ...

We present a generalization of the three-layer model to calculate the surface secondharmonic generation (SSGH) yield, which includes the depth dependence of the surface non-linear second-order susceptibility tensor χ(−2ω; ω, ω). This model considers that the surface is represented by three regions or layers. The first layer is a semi-infinite vacuum region with a dielectric function εv(ω) = 1, ...

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C–V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/...

We demonstrate the fabrication of solid-state dielectric energy storage materials from selfassembled, aligned single-walled carbon nanotube arrays (VA-SWNTs). The arrays are transferred as intact structures to a conductive substrate and the nanotubes are conformally coated with a thin metal-oxide dielectric and a conductive counter-electrode layer using atomic layer deposition. Experimental res...

The downscaling of feature sizes in integrated circuits (IC) requires on-chip interconnects with low dielectric constant layers (low-k) that mitigate the increase in propagation delay and power consumption. Several candidate low-k materials based on porous silicates have been proposed. Whereas porosity is beneficial for lowering the dielectric constant, it has detrimental effects on the mechani...

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...