This work presents a new artificial neural network (ANN) model formulation for RF high-power transistors which includes the S-parameters of active device. improves small-signal extrapolation capability, and OFF-state impedance approximation, making it suitable Doherty power amplifier (DPA) design. capability plays key role in correct load modulation prediction, since, at low levels, peaking PA ...

A digital look-up table adaptive predistortion technique using a six-port receiver for power amplifier linearization is presented. The system is designed in Ka-band for a DVB-S2 satellite link. We use a six-port receiver at the linearizationloop in place of classic heterodyne receivers. The six-port receiver is implemented by the use of passive microwavecircuits and detector diodes. This approa...

This paper presents a digital power amplifier (DPA) with built-in AM-PM compensation technique and compact single-transformer footprint. The distortion behavior of the current mode/voltage mode PAs are detailed an for both modes is introduced. proposed design utilizes one current-mode as main path PA class-G voltage auxiliary PA, combined through single transformer It provides enhanced linearit...

This paper discusses about systematic design approach of Reactance Compensated Class-E. The theory behind conventional Class-E is described then differences between Compensation explained and derived. reactance compensated gives better high efficiency bandwidth. range shunt capacitor value that can maintain operation also increases compared to overall impedance for derived shows it the same as ...

a novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm cmos technology. a resistive-capacitive feedback is used to extend the bandwidth of the amplifier. as the structure is inductor less, it is suitable for low cost integrated optical interconnects. in this paper improved particle swarm optimization have applied to determine optimal trans-resistance and noise of propose...

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode classD (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equ...

Abstract- A novel low-voltage two-stage operational amplifier employing resistive biasing is presented. This amplifier implements neutralization and correction common mode stability in second stage while employs capacitive dc level shifter and coupling between two stages. The structure reduces the power consumption and increases output voltage swing. The compensation is performed by simple mill...