The properties of semiconductors can be crucially impacted by midgap states induced dopants, which native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), has a tunable bandgap, existence dopants been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported tight-binding cal...

A new model for incomplete ionization of dopants in Si is presented, where the Fermi level free carriers may displace with respect to case full activation dopants. The curves ratio free-carrier density and active-dopants vs doping, which are calculated at partial model, overlap exactly same quantity a reported model. Calculations performed without parameterizations states occupancy probability ...

Electron transport in bilayer phosphorene is studied using the first-principles and nonequilibrium Green’s function formalism. We have explored interlayer properties of a vertically stacked structure with paired substitutional doping. The electron are calculated compared doping, which shows tunable anisotropic nature doped I–V characteristics. Further, to understand role played by dopants, quan...

Samples of Ba1.266Ti2.956 Fe7.6Li0.844O19 hexaferrite have been prepared using anatase and rutile phases of TiO2 by classical ceramic route. A pure sample of Ba Fe12O19 has also been prepared for comparison. The structural, electrical and magnetic characteristics have been studied by XRD, SEM, FTIR, two probe method, hysteresis loop and susceptibility curves. The samples exhibit hexagonal magne...

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