We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubren...

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The TFT LCD (Thin Film Transistor Liquid Crystal Display) industry is one the most rapid growth high-technology industry in recent decades. The development process of this industry is complex and dynamic, requires the accumulation of technology capability, capital, production capacity, and human resources. For a late coming country, the development process also involves with tense interactions ...

Progress in semiconductor process technology has made SO1 transistors ons of the most promising candidates for high pertormance and low power designs. With smaller diffusion capacitances, SO1 transistors switch significantly faster than their traditional hulk MOS counterparts and consume less power per switching. However, design and simulation of SO1 MOS circuits is more challenging due to more...

Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that the 1 noise can be reduced through a switched gate, and the flicker noise generated is inversely proportional to the gate switchi...

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM b...

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent proposal of an all-semiconductor spin transistor and a spin battery. We also address some key issues in spin-polarized transport, which are relev...