The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence (TRPL) in the temperature range of 77 500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increas...

The modulation of millimeter-wave transmission through a silicon wafer upon photoexcitation is typically very inefficient for off-the-shelf low effective charge carrier lifetime wafers, requiring tens kilowatts photoexciting intensity to generate significant modulation. Here we demonstrate that increasing the light-matter interaction millimeter waves using diffractively coupled waveguide modes ...

We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxiall...

The experimental determination of the carrier multiplication (CM) time constant is complicated by the fact that this process occurs within the initial few hundreds of femtoseconds after excitation and, in transient-absorption experiments, cannot be separated from the buildup time of the 1p-state population. This work provides an accurate theoretical determination of the electron relaxation life...

Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 mA, to about 1 ns at a bias close to threshold. F...

Halide perovskites have been considered as nuclear radiation detection materials due to their high mobility, long carrier lifetime, and absorption coefficient. However, it has reported th...

The femtosecond-pulsed laser processed black silicon (fs-bSi) features high absorptance in a wide spectral range but suffers from amount of induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize charge carrier recombination fs-bSi caused indicated sub-bandgap absorption and quantified lifetime, while maintaining above bandgap. effect parameters, including ...