This paper will describe an active pixel CMOS-compatible imager aimed at high resolution still cameras. We will discuss pixel operation, column sense circuits, serial output, and show results from existing imagers. In this abstract, we show results from a prototype 640x480 imager with 5.9x5.9 μm2 pixels built in 0.8 μm double-poly CMOS with one additional base implant. Active Capacitor-coupled ...

Emitter geolocation using a single moving receiving-station is explored. We propose algorithms for transponder-aided geolocation of an emitting station where the transmitted waveform is either known or unknown a priori. The emitter position is estimated directly (in a single-step) from the received signal samples. Numerical examples are provided to illustrate the performance. The results are co...

Equations describing the high-frequency nonlinear behavior of common-emitter and differential-pair transconductance stages are derived. The equations show that transconductance stages using inductive degeneration are more linear than those using capacitive or resistive degeneration, and that the common-emitter transconductance stages are more linear than the differential-pair transconductance s...

In this paper, we investigate the energy spectrum and coherent dynamical process in a cavity-QED setup with moving emitter, which is subject to harmonic potential. We find that vibration of emitter will induce effective Kerr optomechanical interactions. generalize Bogliubov operators approach dealt quantum Rabi model, our cavity-emitter-vibration system obtain exactly. With assistance approach,...

– This paper reports the first demonstration of a 9.2kV 4H-SiC bipolar junction transistor (BJT) based on a 50 μm, 7x10cm doped drift layer, achieving an emitter current density of 150A/cm at VCEO=5V. A much larger area BJT of identical wafer design with negligible current spreading effect would have an RSP_ON equal to 49mΩ-cm limited only by the specific resistance of the 50um drift layer. A D...

Alloying base contacts directly through an InGaP emitter layer provides excellent passivation of the GaAs base in HBTs. Processes which utilize this ledge formation scheme and a self-aligned, wet-chemical basecollector etch can suffer degradation in DC performance. Layouts with a hexagonal emitter can circumvent any DC performance degradation because the base electrode can be used as the etch m...

NHL is the most common hematologic cancer in adults. Rituximab is the FDA approved treatment of relapsed or refractory low grade B-cell Non-Hodgkin Lymphoma (NHL). But patients eventually become resistant to rituximab. Since lymphocytes and lymphoma cells are highly radiosensitive, low grade NHL that has relapsed or refractory to standard therapy is treated by RIT in which a beta-emitting radio...

Developing a quantum photonics network requires a source of very-high-fidelity single photons. An outstanding challenge is to produce a transform-limited single-photon emitter to guarantee that single photons emitted far apart in the time domain are truly indistinguishable. This is particularly difficult in the solid-state as the complex environment is the source of noise over a wide bandwidth....

Coherent transport through resonant tunneling diodes at high bias is determined by the transfer of carriers described by momentum and energy from a bath in the emitter through a central resonance to the collector. Simplified treatments of coherent carrier transport assume the transverse carrier dispersions to be identical and parabolic in the emitter and central device. This results in a carrie...