A theoretical approach aiming at the prediction of segregation of dopant atoms on nanocrystalline systems is discussed here. It considers the free energy minimization argument in order to provide the most likely dopant distribution as a function of the total doping level. For this, it requires as input (i) a fixed polyhedral geometry with defined facets, and (ii) a set of functions that describ...

Abstract. Optical fibers are made of glass with different refractive indices in the (inner) core and the (outer) cladding regions. The difference in refractive index arises due to a rapid transition in the concentration of a dopant across the boundary between these two regions. Fibers are normally drawn from a heated glass preform, and the different dopant concentrations in the two regions will...

Abstract Uranyl oxalate (UO 2 C O 4 ·xH O) may exist at the back-end of nuclear fuel cycle (NFC) as an intermediate in spent reprocessing. The conditions used aqueous reprocessing and thermal treatment can affect physical chemical properties material. Furthermore, trace impurities, such Fe, incorporate into structure these materials. In forensics, understanding relationships between processing ...

Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which w...

Keywords: Si, effective density of states, Fe, defect level, processing temperature In order to make predictive models of transition metal gettering during semiconductor processing, a complete understanding of the process variables in high temperature ranges is essential. These variables are the internal gettering site density and capture radius, the intrinsic metal solubility, silicon doping l...

This paper presents results obtained when using scanning nonlinear dielectric microscopy (SNDM) to measure dopant profiles in transistors. Secondary ion mass spectrometry (SIMS) measurements of an epitaxial multilayer film on a standard sample and SNDM measurements of the sample surface showed that it was possible to obtain a uniform concentration region with a thickness of approximately 4–5 μm...

Zn1-xRxO (R = Li, Mg, Cr, Mn, Fe and Cd) were obtained by using co-precipitation synthesis technique with constant weight percent of 3% from R ions. The phase composition, crystal structure, morphology, density functional theory (DFT), magnetic properties examined to comprehend the influence Zn2+ partial substitution X-ray diffraction shows that ZnO lattice parameters slightly affected doping d...

Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily doped deep-source drain and ultra-shallow junctions as required in advanced microelectronic technology. Experimental phosphorus dopant diffusion profiles in silicon are described by a rational function diffusion (RFD) model, based on direct solution of Fick’s equations and suitable for actual work in...