Simulations have been performed using the free-energy binary-liquid lattice Boltzmann method with sufficient resolution that the critical capillary number for coalescence was determined for collisions between droplets in simple shear with a small initial offset in the shear gradient direction. The simulations were used to study the behavior of the interacting interfaces and the film between the...

First we will demonstrate that with a proper account of the various aspects of the finite size effects the values of the interfacial thermal (Kapitza) resistance, RK, obtained via molecular dynamics simulations by equilibrium and non-equilibrium methods are the same. In the next part of the presentation we demonstrate that RK between a substrate and a nanoscopic film is thickness-dependent due ...

This paper will explore the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry . Reflected light from the wafer's surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recognition algorithm. The instrumentation used...

Through a set of microtensile experiments, it was discovered that the resistance of a free-standing polycrystalline silicon thin film to cleavage cracking is not a material constant. Rather, it is highly dependent on the film thickness. As the film thickness changes from 1 to 10 lm, the fracture resistance increases by 20–60%, which can be attributed to the nonuniform nature of the crack front ...

Sm-doped BiFeO3 thin films were fabricated on platinized silicon substrates via a sol-gel method. Sm contents and thicknesses were varied in a wide range to investigate their effects on the phase structure and piezoelectricity. X-ray diffraction and Raman spectroscopy experiments revealed a rhombohedral to orthorhombic phase transition and the co-existence of both phases in a certain compositio...

where d = thickness of the film, ,o = resistivity of the film, = resistivity of the bulk material having the same structure and approximately the same number of defects as the films, l0 = mean free path of the charge carriers. The values of l0 calculated by the two methods were found to agree satisfactorily. Figs. 7 and 8 show the variation of the Hall mobility (/̂ H) with film thickness and sub...

The classical Stoney formula relating local equibiaxial film stress to local equibiaxial substrate curvature is not well equipped to handle realistic cases where the film misfit strain, the plate system curvature, and the film thickness and resulting film stress vary with in-plane position. In Part I of this work we have extended the Stoney formula to cover arbitrarily non-uniform film thicknes...

Gold films on poly(dimethylsiloxane) (PDMS) have applications in stretchable electronics, tunable diffraction gratings, soft lithography and as neural interfaces. The electrical and optical properties of these films depend critically on the morphology of the gold. Therefore, we examine qualitatively and quantitatively the factors that affect the morphology of the gold film. Three morphologies c...

The absorption coefficient of CdTe is large enough to assure that all of the visible light is absorbed in a thickness on the order of 1 μm. High efficiency devices are fabricated by using close-spaced sublimation (CSS)-deposited CdTe films with a thickness in the range of 6–8 μm. In order to decrease the thickness of the CdTe film, a novel approach has been used. On top of the CdTe film, whose ...

Thin films of copper, with thickness between 0.1 and 3 mm, were vapor-deposited on 12.7 or 7.6-mm-thick polyimide ~Kapton! substrates. They were tested in a microtensile tester in which the strain is measured by optical diffraction from a microlithographically applied grid. The Young modulus is independent of film thickness and is about 20% below the value calculated from single-crystal elastic...