In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied X-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced current drive, whereas the body-strapped structures allow for active leakage control and in some cases impact ionization devices. We demonstrate an ...

The operation and degradation mechanisms in silicon on insulator LD-MOSFETs are governed by the series resistance which is back-gate bias dependent. The influence of the back-gate bias during degradation and subsequent testing is investigated and modeled. The damage formation and overall loss in LD-MOSFETs performance induced by irradiation, hot-carrier injection, or low temperature are complex...

We investigate the tunneling conductance of superconductor-insulator-normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side junction that is electrically driven can exhibit $\pi$-pairing through a modification surface inversion asymmetric couplings. In SIN we find variation interactions generally brings an increase quasi-particles in ...

Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor that is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critic...

Submitted for the MAR08 Meeting of The American Physical Society Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators TOSHIHIKO MAEMOTO, KENJI FUJIWARA, TATSUYA INOUE, NAOKI AMANO, MASATOSHI KOYAMA, SHIGEHIKO SASA, MASATAKA INOUE, OSAKA INSTITUTE OF TECHNOLOGY TEAM — We report on the fabrication and characterization of InAs/AlGaSb high electron mobility transistors ...

with advances in genetic science, the dynamic structure of eukaryotic genome is considered as basis of gene expression regulation. long-distance communication between regulatory elements and target promoters is critical and the mechanisms responsible for this connection are just starting to emerge. chromatin insulators are key determinants of proper gene regulation and precise organization of c...

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

In this paper, the reliability issues of the lateral insulator gate bipolar transistor based on SOI substrate (SOI-LIGBT), including the anode punch-through, the terminal early breakdown, the hot-carrier degradation and the latch-up failure, have been experimentally investigated and improved. The measurement results and the T-CAD simulations demonstrate that the proposed device owns higher reli...

A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic in...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...