It has been previously proposed that the set and reset processes in a unipolar switching metal‐oxide‐metal memristive device can be explained by thermodiffusion only. In order to validate this, time‐dependent finite element method (FEM) simulations are performed purely theoretical study. To end, range of configurations regarding geometry various parameters is used. particular, this includes usi...

in this paper, we give some determinantal and permanental representations of generalized lucas polynomials, which are a general form of generalized bivariate lucas p-polynomials, ordinary lucas and perrin sequences etc., by using various hessenberg matrices. in addition, we show that determinant and permanent of these hessenberg matrices can be obtained by using combinations. then we show, the ...

In the current article, in presence of thermal and diffusion processes, equations governing elastic materials through thermodiffusion are obtained. The Moore–Gibson–Thompson (MGT) equation modifies defines for conduction mass that occur solids. This modification is based on adding heat relaxation times Green–Naghdi Type III (GN-III) models. an unbounded medium with a cylindrical hole, built mod...

Resistive switching in metal oxides is believed to be caused by a temperature and electric field driven redistribution of oxygen vacancies within nanometer sized conductive filament. Accordingly, gaining detailed information about the chemical composition filaments key importance for comprehensive understanding process. In this work, spectromicroscopy used probe electronic structure Ta2O5-based...