This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardeni...

Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose this study is to produce optimize properties Aluminum doped Zinc (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface silicon Heterojunction Solar Cells (HJ...

In this article, the design and development of ultra-wideband UWB branch-line couplers BLCs with a novel method to control coupling imbalance are proposed. The proposed BLC is suitable for 5G low-noise amplifier (LNA) design. 4-branch designed using curves developed even odd mode analyses cover (3.3-5 GHz) frequency bands. vertical branches replaced by modified ones, their effect on investigate...

The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. A pseudo-differential common-base (CB) stage neutralization capacitors low-loss coupled-line balun (CLB) improve the gain reduce matching loss. single-stage design achieves 8.3 to 12.7-dBm output 7.7 17.3% power-...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silico...

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 has been investigated. The measured Gummel characteristics illustrate that the collector current and base both shift higher as decreases. f T /f max are extracted be 23/40 GHz at 300K, 28/40 90 K, 25/37GHz 10K, respectively. effective amplification become...

the mobility result is comparable to that achieved in other ZDEG structures where the GaAs layer has been grown on the modulation doped layer of AlGaAs.” In future designs the precise collector barrier profile will be altered to increase this transfer efficiency. Even allowing for possible parallel conduction in the collector barrier at room temperature in our present structure, the base-base r...

This paper presents a novel technique to eliminate non-simultaneous triggering e ects in nger-type ESD protection transistor using SiGe heterojunction buried layer structures. It is con rmed that lower snapback voltage and maximum lattice temperature are obtainable in the new structure based on device simulation. As a result, current localization and lattice overheating of a nger-type protectio...