Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...

Delay analysis providing an alternative physical explanation on carrier transport, which may be more applicable to high electron mobility transistor (HEMT) channels with moderate carrier mobilities, has been applied to enhancement-mode (E-mode) and depletion-mode (D-mode) InAlN/AlN/GaN HEMTs with comparable fT at room and cryogenic temperatures. It was found that the speed of the E-mode HEMTs w...

Experiments to determine the resistivity and charge-carrier mobility in semiconducting carbon nanotubes are reviewed. Electron transport experiments on long chemical-vapour-deposition-grown semiconducting carbon nanotubes are interpreted in terms of diffusive transport in a field-effect transistor. This allows for extraction of the field-effect and saturation mobilities for hole carriers, as we...

For the development of next-generation GaN-based high electron mobility transistors, reliable software tools for DC and AC simulation are required. A hydrodynamic approach must be used, as the drift diffusion models fail to deliver accurate results for such structures. We propose two different hydrodynamic mobility models which account for the peculiarities of the GaN material system. The model...

In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...

Particle localization is an essential ingredient in quantum Hall physics. In conventional high-mobility two-dimensional electron systems such as in GaAs/AlGaAs semiconductor heterostructures, Coulomb interactions were shown to compete with disorder and to have a central role in particle localization. Here, we address the nature of localization in graphene where the carrier mobility, quantifying...

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO₂, obtaining specific contact resistivity ρ c ≈ 19 k Ω · µ m 2 and carrier mobility as high as 4000 cm²·V-1·s-1. By using a highly doped p-Si/SiO₂ substrate as the back gate, we analy...

Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...

Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor characteristics. The dependencies of mobility on gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages, mobility is found to increase monotonically with increasing sheet carrier concentration,...