نتایج جستجو برای: implant interface

تعداد نتایج: 250662  

Journal: :The Journal of oral implantology 2000
W M Locante M Valen

The sinusoidal thread design of the LaminOss (Impladent Ltd, Holliswood, NY) osteocompressive immediate-load implant is structured with minimal shear interface to function in horizontal planes and stimulate bone growth by the action of streaming potentials at the implant thread surface area. This implant design, when used with a unique surgical instrumentation technique, allows maximum bone to ...

Journal: : 2021

Osseointegration can be defined as a direct structural and functional link between bone implant surface. Asymptomatic rigid fixation of the alloplastic material in is crucial for stability long-term success dental treatment. The connection surrounding tissue extremely dynamic. This interaction basis formation new structure—the implant-tissue interface. process osseointegration combination biolo...

Journal: :ORAL & implantology 2010
G Sannino G Marra L Feo G Vairo A Barlattani

PURPOSES The aim of the study was to assess by means a 3D finite element linear and non-linear analysis mechanical interaction between an implant-supported crown and surrounding tissues. MATERIALS AND METHODS A three-dimensional FEM model was developed. Four different material combinations for the abutment and the core were evaluated: Y-TZP - Y-TZP, Y-TZP - microhybrid composite, T - microhyb...

Journal: :Clinical oral implants research 2010
João Pedro Aloise Ricardo Curcio Marcia Zorello Laporta Liliane Rossi Adriana Madeira Alvares da Silva Abrão Rapoport

OBJECTIVES The aim of this study was to determine and compare the frequency of bacterial leakage of Streptococcus sanguinis biotype II along the implant-abutment interface between two systems of morse taper dental implants. Different methods of activation of the taper abutments were used: tapped-in (Bicon) and screwed-in (Ankylos). MATERIALS AND METHODS Twenty sterile assemblies were used and...

2012
Cássio do Nascimento Rubens Ferreira

Titanium implants have been successfully and increasingly used for the substitution of dental elements in the treatment of total or partial edentulism, exhibiting success rates frequently above 90%, since the earliest reports on this technique in the 1960 decade (Lang et al., 2004; Pjetursson et al., 2007; Jung et al., 2008). When treatment failures are calculated based on patients who lost imp...

Journal: :Journal of musculoskeletal & neuronal interactions 2004
E M Schwarz R J O'Keefe R J Looney

2008
Joshua S. Stohl Leslie M. Collins

An experimental psychophysical interface has been developed using Hearworks Pty Ltd’s SPEAR3 research sound processor, which is compatible with Cochlear Corporation’s Nucleus CI22 and CI24 implants. Modifications to the assembly code program file that resides in the SPEAR3 allow the parameters of a given stimulus to be updated on a trial-by-trial basis due to the responses given by a cochlear i...

2003
Lídia Carvalho António Ramos José A. Simões

This paper describes a numerical study performed with the finite element method of novel dental implant system. A conventional Brånemark dental implant system was redesigned and a bio-inert stress barrier (elastomer) was interposed between the implant and the ceramic crown. The goal was to attenuate the loading of the bone surrounding the implant with high magnitude stresses. The new design was...

2010
Christopher Wong Ian S. Curthoys Stephen O’Leary Allan S. Jones

Aims The cochlear implant is an electroneural implanted device which helps to restore communication in patients with profound auditory deafness. The implant, works on the concept of direct electrical stimulation of the spiral ganglion cells, within the cochlea. The cochlea is a snail-like coiled structure, apart of the inner-ear labyrinth; its role is to convert hydro-dynamic vibrations to elec...

2000
D. Misra

Ion implantation was used to incorporate deuterium at the Si–SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type ^100& silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1310/cm at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps...

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