نتایج جستجو برای: ingan
تعداد نتایج: 1955 فیلتر نتایج به سال:
We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...
Laser diodes (LDs) based on InGaN quantum well (QW) structures emitting in the blue to green spectral region are of great interest for applications ranging from spectroscopy to laser projectors for mobile devices. Whereas LDs in the blue spectral region are available commercially, the so-called “green gap” is just at the point of being bridged. The necessity of creating InGaN QWs with high indi...
Ultra-short pulses in blue region generated from compact and low-cost semiconductor lasers have attracted much attention for a wide variety of applications. Nitride-based vertical-cavity surface-emitting lasers (VCSELs), having intrinsic high material gain and short cavities, favor the generation of ultra-short blue pulses via a simple gain-switching technique. In this study, we fabricated a si...
InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process....
We investigated the efficiency droop and polarization-induced internal electric field of InGaN blue light-emitting diodes (LEDs) grown on silicon(111) and c-plane sapphire substrates. The efficiency droop of the LED sample grown on silicon substrates was considerably lower than that of the identically fabricated LED sample grown on sapphire substrates. Consequently, the LED on silicon showed hi...
Articles you may be interested in Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Appl. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes
Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in non-polar InGaN/GaN quantum well (QW) samples due migration carriers InGaN QW layers GaN barrier first time. Such an unusual phenomenon happens only when are optically excited inside layers, providing solid evidence occurrence transfer photoexcited layers. A simple mo...
Abstract GaN two-dimensional (2D) photonic crystal nanocavities with a single embedded InGaN quantum well are undercut by photo-electrochemical (PEC) etching and optically characterized to investigate the fundamental mode. The PEC selectively removes an InGaN-based sacrificial layer form air-suspended cavity slabs. We investigated resonant modes of micro-photoluminescence spectroscopy measureme...
We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1-xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been inve...
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