This paper presents a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar t...

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

In the paper a bi-directional power electronic interface based on an inductive coupled contactless energy transfer system for plug-in vehicles with Vehicle-to-Grid (V2G) capability is presented. To minimize the total losses of the system, a series resonant compensation circuit is applied assuring Near to Zero-Current Switching (N2ZCS) condition for insulated-gate bipolar transistors. The analyt...

Nanowire-based field-effect transistors are among the most promising means of overcoming the limits of today's planar silicon electronic devices, in part because of their suitability for gate-all-around architectures, which provide perfect electrostatic control and facilitate further reductions in "ultimate" transistor size while maintaining low leakage currents. However, an architecture combin...

This paper presents a new electro-thermal coupling simulation method for evaluating the reliability of IGBT modules, which combines numerical power loss model and finite element model. To illustrate method, specific case Infineon FF50R12RT4 module operated with an SPWM signal is considered. Temperature stress data are obtained analyzed via simulation, service life modules calculated accordingly...

Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor characteristics. The dependencies of mobility on gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages, mobility is found to increase monotonically with increasing sheet carrier concentration,...

Organic Thin Film Transistors (OTFT), gated through an aqueous electrolyte, have extensively been studied as sensors in various applications. These water-gated devices are known to work both as electrochemical (Organic ElectroChemical Transistor OECT) and field-effect (Organic Field-Effect Transistor OFET) devices. To properly model and predict the response of water-gated OTFT sensors it is imp...