A simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of Resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. We found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency THz QCLs.In low frequenc...

We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...

We report on the InGaAs/GaAsSb material system lattice-matched to InP for intersubband devices. Due to the much lower electron effective mass in the GaAsSb barrier material, this system is very promising for the realization of high performance intersubband devices, like quantum-cascade lasers and quantum well infrared photodetectors. Type I intersubband absorption in InGaAs/GaAsSb multi-quantum...

Electron-longitudinal optic phonon and electron-electron intersubband scattering rates are calculated for a variety of quantum well systems. It is demonstrated that the internal quantum eeciency of a Terahertz radiative intersubband transition can be greater than in the mid-infrared at 4 K, however by room temperature has fallen to around 20%. A study of the internal quantum eeciency of a Terah...

Rapid design and development of the emergent ultrawide-bandgap semiconductors [Formula: see text] require a compact model their electronic structures, accurate over broad energy range accessed in future high-field, high-frequency, high-temperature electronics visible ultraviolet photonics. A minimal tight-binding is developed to reproduce first-principles structures text]- text]-phases througho...

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown...

We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from interand intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily resp...