نتایج جستجو برای: ion bombardment

تعداد نتایج: 208031  

2007
J. P. Allain M. D. Coventry D. N. Ruzic

The lithium sputtering yield from lithium and tin-lithium surfaces in the liquid state under bombardment by low-energy, singly charged particles as a function of target temperature is measured by using the Ion-surface Interaction Experiment facility. Total erosion exceeds that expected from conventional collisional sputtering after accounting for lithium evaporation for temperatures between 200...

Journal: :The journal of physical chemistry. B 2006
Juan Cheng Andreas Wucher Nicholas Winograd

Peptide-doped trehalose thin films have been characterized by bombardment with energetic cluster ion beams of C60+ and Aux+ (x = 1, 2, 3). The aim of these studies is to acquire information about the molecular sputtering process of the peptide and trehalose by measurement of secondary ion mass spectra during erosion. This system is important since uniform thin films of approximately 300 nm thic...

2008
K. Yamaguchi M. Kitazawa Y. Sugita J. Tanaka M. Tanemura Y. Hayashi

Graphite surfaces were bombarded with Ne, Ar and Xe ions at 450 eV–1 keV to induce the carbon nanofiber (CNF) growth at room temperature, and the dependence of size and numerical density of ion-induced CNFs on the ion species and ion energy was investigated in detail. The ion-sputtered surfaces were covered with densely distributed conical protrusions and aligned CNFs grew on the tips, except f...

2016
Robert Peter Iva Šarić Mladen Petravić

The formation of oxide films on pure Ni surfaces by low energy oxygen ion-beam bombardment at room temperature was studied by X-ray photoelectron spectroscopy. Ion-induced oxidation is more efficient in creating thin NiO films on Ni surfaces than oxidation in oxygen atmosphere. The oxide thickness of bombarded samples is related to the penetration depth of oxygen ions in Ni and scales with the ...

2009
R. Fossum

Bombardment ofsilicon (100) stIrfaces at room temperature by an oxygen-containing low-energy ion beam is studied as an alternative to thermal oxidation to produce ultrathin oxide films. A self­ limiting oxide thickness of about 50 A is obtained by using ions with energy 100 eV or lower. Auger electron spectroscopy depth profiles of an ion-beam grown oxide and a thermally grown oxide show very s...

2010
Yuk-Hong Ting Chi-Chun Liu Sang-Min Park Hongquan Jiang Amy E. Wendt

Selectively plasma-etched polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer masks present a promising alternative for subsequent nanoscale patterning of underlying films. Because mask roughness can be detrimental to pattern transfer, this study examines roughness formation, with a focus on the role of cross-linking, during plasma etching of PS and PMMA. Variables include...

2017
Aleksey B. Smirnov Rada K. Savkina Ruslana S. Udovytska Oleksandr I. Gudymenko Vasyl P. Kladko Andrii A. Korchovyi

Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 - x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and ...

2016
H. Werner A. Von Rosenstiel H. W. Werner

Different modes of SIMS for thin film analysis and the principle of SIMS will be discussed; this will be followed by a discussion of some features related to instrumentation: types of ion sources and their characteristics; ion microprobe versus ion microscope; special modes of SIMS: sputter neutral mass spectrometry (SNMS) and fast atom bombardment. (FAB). The discussion of analytical features ...

2009
Qiangmin Wei Xiuli Zhou Bhuwan Joshi Yanbin Chen Kun-Dar Li Qihuo Wei Kai Sun Lumin Wang

Low-energy-ion bombardment of semiconductors can lead to the development of complex and diverse nanostructures. Of particular interest in these structured surfaces is the formation of highly ordered patterns whose optical, electronic, andmagnetic properties are different from those of bulk materials and might find technological uses. Compared to the low efficiency of lithographic methods for ma...

2009
G. D. Saraiva A. G. Souza Filho G. Braunstein E. B. Barros J. Mendes Filho E. C. Moreira S. B. Fagan D. L. Baptista Y. A. Kim H. Muramatsu M. Endo M. S. Dresselhaus

Citation Saraiva, G. D. et al. " Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matter...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید