نتایج جستجو برای: junctionless tunnel field effect transistor

تعداد نتایج: 2369586  

Journal: :Journal of Engineering Technology and Applied Physics 2023

To meet the performance requirements of low power mobile devices, a device with high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their subthreshold slope and transconductance compared MOSFETs. However, silicon-based have on-state current, which limits use in high-performance applications. overcome this limitation, using narrower band gap material like Ge can increas...

2014
Wei Li Qin Zhang R. Bijesh Oleg A. Kirillov Yiran Liang Igor Levin Lian-Mao Peng Curt A. Richter Xuelei Liang S. Datta David J. Gundlach N. V. Nguyen

2012
Deblina Sarkar Kaustav Banerjee

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2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

2010
W. C. Kao A. Ali E. Hwang S. Mookerjea S. Datta

The effect of interface states on the current–voltage characteristics in the sub-threshold region of three different types of III–V based transistor architectures has been studied using a drift–diffusion based numerical simulator. Experimentally extracted interface state density profile is included in the simulation to analyze their effect on the sub-threshold response of InGaAs based MOSFETs, ...

2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

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