نتایج جستجو برای: la2o3 co3o4 zro2

تعداد نتایج: 4886  

2005
Y. CASTRO B. FERRARI R. MORENO A. DURÁN

SiO2-ZrO2 sols have been prepared via acid catalysis using a commercial colloidal suspension of zirconia and two silica alkoxides; tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES). Suspensions with 10, 15 and 25-mol% of ZrO2 were prepared. The stability of the suspensions was followed by rheological measurements showing that the amount of water incorporated with the colloidal suspensio...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تبریز - دانشکده شیمی 1393

در پروژه حاضر از co3o4)1-x(fe3o4)x) سنتز شده به روش سل – ژل طیف xrd گرفته شد و با بررسی انجام شده مطابق طیف حاصل از co3o4 , fe3o4 نشان دهنده ساختار مکعبی ماده حاصل می باشد.طیف مربوط به ترکیب co3o4)0.9(fe3o4)0.1) با طیف ترکیب co3o4 مطابقت بیشتری دارد به این معنا که این ترکیب از یک فاز مکعبی تشکیل شده است و به صورت اسپینل می باشد. طیف فوق از ترکیب co3o4)0.6(fe3o4)0.4)در 600 درجه سانتیگراد تهیه شد...

2017
Amit Singhania Shipra Mital Gupta

Zirconia (ZrO2) nanoparticles were synthesized by solution combustion using urea as an organic fuel. Brunauer-Emmett-Teller (BET), X-ray diffraction (XRD), thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), UV-vis and Fourier transform infrared (FTIR) measurements were performed in order to characterize the catalyst. The calculated crystallite size of ZrO2, calculated w...

2017
Ruomeng Huang Xingzhao Yan Sheng Ye Reza Kashtiban Richard Beanland Katrina A Morgan Martin D B Charlton C H Kees de Groot

A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 - x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 - x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retr...

2009
Chuanxian Ding Xuanyong Liu

Plasma sprayed zirconia deposits have been employed in wide applications for thermal protection. Recently, the use of nanostructural surface represents an alternative for improving the performance of these coatings. The present paper reviewed the works in this field at our research group, including synthesis of nanostructural ZrO2 powders, influence of spraying parameters on microstructure and ...

2015
Ye Wang Zhi Xiang Huang Yumeng Shi Jen It Wong Meng Ding Hui Ying Yang

Transition metal cobalt (Co) nanoparticle was designed as catalyst to promote the conversion reaction of Sn to SnO2 during the delithiation process which is deemed as an irreversible reaction. The designed nanocomposite, named as SnO2/Co3O4/reduced-graphene-oxide (rGO), was synthesized by a simple two-step method composed of hydrothermal (1(st) step) and solvothermal (2(nd) step) synthesis proc...

2017
Su-Ho Cho Ji-Won Jung Chanhoon Kim Il-Doo Kim

Cobalt oxide that has high energy density, is the next-generation candidate as the anode material for LIBs. However, the practical use of Co3O4 as anode material has been hindered by limitations, especially, low electrical conductivity and pulverization from large volume change upon cycling. These features lead to hindrance to its electrochemical properties for lithium-ion batteries. To improve...

2011
Pei Yuin Keng Mathew M. Bull In-Bo Shim Kenneth G. Nebesny Neal R. Armstrong Younghun Sung Kookheon Char Jeffrey Pyun

In this report, functional one-dimensional (1-D) Pt-Co3O4 heterostructures with enhanced electrochemical properties were synthesized via colloidal polymerization of polymer-coated ferromagnetic cobalt nanoparticles (PS-CoNPs). Colloidal polymerization of dipolar nanoparticles into hollow metal-semiconductor nanowires was achieved via a consecutive galvanic replacement reaction between Co and Pt...

2012
Chun-Chieh Lin Yi-Peng Chang Huei-Bo Lin Chu-Hsuan Lin

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at ro...

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