Spinnaker Semiconductor has demonstrated and continues to develop a patent-protected metal source/drain Schottky barrier MOS technology (SBMOS). The SBMOS transistor architecture replaces the impurity doped source and drains of conventional silicon MOS with metal. This simple change provides numerous performance, manufacturability and cost advantages compared to competing silicon CMOS architect...

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Double-exchange model in infinite dimension is studied as the strong Hund’s coupling limit J → ∞ of the Kondo lattice model. Several quantities such as Green’s function and the d.c. conductivity are calculated in analytical forms. Magnetoresistance in lightly doped La1−xSrxMnO3 is reproduced very well.

Diamond is one of the most studied materials because its unique combination remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory coupled electron-phonon transport, we reveal another striking behavior: huge drag enhancement thermopower lightly doped diamond. Thermopower values around 100,000 ?V K?1 are found at 100 K, significantly exc...