Rev. 1.10 ■ Memories – 32K to 60K dual voltage High Density Flash (HDFlash) or ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash devices – 1K to 2K RAM – HDFlash endurance: 100 cycles, data retention: 20 years at 55°C ■ Clock, Reset And Supply Management – Enhanced low voltage supervisor (LVD) for main supply and auxiliary voltage detecto...

A low-power 435-MHz single-ended low-noise amplifier was implemented in a 0.35-μm silicon on insulator (SOI) CMOS technology. The SOI CMOS LNA has a simulated noise figure of 0.6 dB, input 1-dB compression point of –12.5 dBm, input thirdorder intercept point of –5 dBm, and small-signal gain of 22 dB. Total power dissipation is 10 mW from a 2.5-V supply. LNA chip area is 1.4 mm x 0.58 mm. Due to...

A low-noise CMOS amplifier operating at a 1-V supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched op-amp. The low-noise amplifier fabricated by a 0.18-μm CMOS technology was measured at a 1-V power supply, and achieved low nois...

This paper presents a Low Noise Amplifier for UWB Radio Receiver at 8.72GHz using 0.18μm UMC Technology where 0.18μm technology is for lower power consumption. UWB Radio Receiver which made up in between the frequency range of 3.1GHz to 10.6GHz.The basic architecture of LNA comprises a RF amplifier in the middle of input matching network and the output matching network. We have designed a low n...

Wireless Mesh Networks are an increasingly common technology providing connectivity in many communities, particularly where Internet access is unavailable or restricted via more conventional means. Their comparative ease of installation and relatively low cost makes this especially true for communities which might previously have lacked the technical knowledge or skill to attempt such an endeav...