نتایج جستجو برای: microwave field effect transistor

تعداد نتایج: 2380861  

Journal: :IEEE Trans. Instrumentation and Measurement 1999
Denis Barataud Fabrice Blache Alain Mallet P. Philippe Bouysse Jean-Michel Nebus Jean Pierre Villotte Juan J. Obregon Jan Verspecht Philippe Auxemery

One of the most important requirements that RF and microwave power amplifiers designed for radiocommunication systems must meet is an optimum power added efficiency (PAE) or an optimal combination of PAE and linearity. A harmonic active load–pull system which allows the control of the first three harmonic frequencies of the signal coming out of the transistor under test is a very useful tool to...

Journal: :Applied Science and Convergence Technology 2014

Journal: :Elektronìka ta ìnformacìjnì tehnologìï 2023

Graphene field-effect transistors are recognized as a potential alternative to metal-oxide-semiconductor and can become new element base in the post-silicon epoch. Increasing efficiency of graphene electronic devices simplifying their manufacturing technology important R&D areas. New technical solutions related development proposed paper. A reduced oxide (RGO) film was used conducting chann...

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