This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that divided horizontally; the diode operated through gate p-base N+ source regions at bottom of gate. Because bult-in was p...

The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, t...

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the chan...

In the present paper we have done a comparative analysis of Dual Gate MOSFET having split gate architecture and conventional Dual Gate MOSFET architecture. Simulations have been performed using SILVACO-ATLAS tool, which shows significant improvement in characteristic of split gate architecture in comparison to the conventional structure. The split gate architecture consist two different materia...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise...

It is vital to measure the dose to the patient's skin during the treatment of total skin electron therapy (TSET). Purpose of the present study is to determine the benefits of using One-Dose MOSFET detectors in the treatment of mycosis fungiodes with TSET protocol. During the study six patients with advanced stage of (MF) were treated by (TSET) using a six dual-field Stanford technique. One-Dose...

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

The Technical Report Series 398 (TRS-398), Electron Dosimetry Working Party (EWDP), and Task Group 51 (TG 51) are the most important protocols for reference dosimetry. In case of electron beam dosimetry, these recommend using parallel-plate ionization chambers beams with R50 values below specific thresholds. However, recent papers suggested cylindrical dosimetry all energies. Here we compared d...