This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2D and ev...

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...

The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wear...

In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENATM process simulator and the device simulation is performed using ATLASTM from SILVACO i...

In this paper, we report the effect of luminous behaviour of transparent gate Recessed Channel MOSFET (RC-MOSFET).Aggressive scaling is associated with a number of higher order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET has emerged to be the ultimate solution. The proposed device...

We report the integration of a MOSFET with a field emission arrays to obtain low voltage switching and more stable emission in field emission devices. Instead of the traditional feedback resistor stabilization in the emitter circuit, a MOSFET is used as a voltage controlled current source thereby stabilizing the emission current and resulting in low voltage switching. In this device, the emitte...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popular...

This article discusses field tests and practical implementation of a low-voltage LED lighting system with renewable energy sources in an autonomous facility the development model for optimal temperature control facility. The method complex management power supply using Smart controller object is also considered. To implement mathematical model, Simulink SimPowerSystems software visual modeling ...