نتایج جستجو برای: nanoelectronic
تعداد نتایج: 778 فیلتر نتایج به سال:
A. S. Vasenko,1,2,* A. A. Golubov,1 M. Yu. Kupriyanov,3 and M. Weides4 1Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands 2Department of Physics, Moscow State University, Moscow 119992, Russia 3Nuclear Physics Institute, Moscow State University, Moscow 119992, Russia 4Center of Nanoelectronic Systems for Information...
Abstract The process and applications of a specific type gaseous discharge—beam–plasma discharge (BPD)—are reviewed. A brief survey the BPD theory is presented. basic features in active geophysical experiments with injection electron beams into Earth’s ionosphere are discussed. Studies physics have revealed effects successively applied plasma technology for processing nanoelectronic materials s...
Stable “T junctions” of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal-semiconductor-metal contacts are proposed. The structures have been found to be local minima of the total energy on relaxation with a generalized tight-binding molecular dynamics scheme. These quasi-2D junctions could be the building blocks of nanoscale tunnel junctions in a 2D net...
Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely expected to be the building blocks of next generation VLSI circuits. This chapter presents (1) the first purely CNT and CNFET based nanoarchitecture, (2) an adaptive configuration methodology for nanoelectronic design based on the CNT nano-architecture, and (3)...
Here we demonstrate Au nanoparticle self-similar chain structure organized by triangle DNA origami with well-controlled orientation and <10 nm spacing. We show for the first time that a large DNA complex (origami) and multiple AuNP conjugates can be well-assembled and purified with reliable yields. The assembled structure could be used to generate high local-field enhancement. The same method c...
W. S. Lee, W. Meevasana, S. Johnston, 2 D. H. Lu, I. M. Vishik, R. G. Moore, H. Eisaki, N. Kaneko, T. P. Devereaux, and Z. X. Shen Department of Physics, Applied Physics, and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305 Department of Physics, University of Waterloo,Waterloo, Ontario, Canada N2L 3G1 Nanoelectronic Research Institute, National Institute of Ad...
Aggressive downscaling of modern semiconductor devices forces development engineers to question the validity of existing modeling approaches. Models for carrier transport have to be considered which are applicable on the transition into the quantum regime. An overview of semiclassical current transport models and their enhancements used for the simulation of nanoelectronic devices is given. Emp...
We review recent progress in the theoretical description of correlation and quantum fluctuation phenomena in charge transport through single molecules, quantum dots and quantum wires. Various physical phenomena are addressed, relating to cotunneling, pair-tunneling, adiabatic quantum pumping, charge and spin fluctuations, and inhomogeneous Luttinger liquids. We review theoretical many-body meth...
Chladni patterns based on nanomechanics in the microfluidic environment are presented. In contrast with the macroscopic observations in the gaseous environment, nanoparticles are found to move to the nodes, whereas micron-sized particles move to the antinodes of the vibrating interface. This opens the door to size-based sorting of particles in microfluidic systems, and to highly parallel and co...
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