complementary metal-oxide semiconductor (cmos) technology has been the industry standard to implement very large scale integrated (vlsi) devices for the last two decades. due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. quantum-dot cellular...

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogene...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

In CMOS circuits, as the technology scales down to nanoscale, the sub-threshold leakage current increases with the decrease in the threshold voltage. LECTOR, a technique to tackle the leakage problem in CMOS circuits, uses two additional leakage control transistors, which are self-controlled, in a path from supply to ground which provides the additional resistance thereby reducing the leakage c...

The usually negligibly small thermoelectric effects in superconducting heterostructures can be boosted dramatically due to the simultaneous effect of spin splitting and spin filtering. Building on an idea of our earlier work (Machon et al 2013 Phys. Rev. Lett. 110 047002), we propose realistic mesoscopic setups to observe thermoelectric effects in superconductor heterostructures with ferromagne...

Organic nanostructures made from organic molecules such as para-hexaphenylene (p-6P) could form nanoscale components in future electronic and optoelectronic devices. However, the integration of such fragile nanostructures with the necessary interface circuitry such as metal electrodes for electrical connection continues to be a significant hindrance toward their large-scale implementation. Here...

So far, all experimental tests of Bell inequalities which must be satisfied by all local realistic hidden-variable theories and are violated by quantum mechanical predictions have left at least one loophole open. We propose a feasible setup allowing for a loophole-free test of the Bell inequalities. Two electron spin qubits of donorsP in a nanoscale silicon host in different cavities 300 m apar...

In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever incr...

Carbon-nanotube-based electronics offers significant potential as a nanoscale alternative to silicon-based devices for molecular electronics technologies. Here, we show evidence for a dramatic electrical switching behaviour in a Y-junction carbon-nanotube morphology. We observe an abrupt modulation of the current from an on- to an off-state, presumably mediated by defects and the topology of th...