Novel thin film optoelectronic devices containing both inorganic colloidal semiconductor quantum dots (QDs) and organic semiconductor thin films have been widely investigated in recent years for a variety of applications. Here, we review one of the most versatile and successful methods developed to integrate these two dissimilar material classes into a functional multilayered device: contact pr...

Black phosphorus has recently emerged as a promising material for high-performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap, and anisotropic electronic properties. Dynamical evolution of photoexcited carriers and the induced transient change of electronic properties are critical for materials' high-field performance but remain to be explored for b...

Optoelectronic is one of the thrust areas for the recent research activity. One of the key components of the optoelectronic family is photo detector to be widely used in broadband communication, optical computing, optical transformer, optical control etc. Present paper includes the investigation. carried on the basis of the. Multiplication measurements on GaAs, InP, InGaAs, GaInP, p+-i-n+s with...

Single-crystal 1,4-bis(4-methylstyryl)benzene is a promising material for optoelectronic device applications. We demonstrate the preparation of 1,4-bis(4-methylstyryl)benzene nanocrystals by a wet process using a bottom-up reprecipitation technique. Scanning electron microscopy revealed the morphology of the nanocrystals to be sphere-like with an average particle size of about 60 nm. An aqueous...

Our work relates to the use of metamaterials engineered to realize a metasurface approaching the exotic properties of an ideal object not observed in nature, a "magnetic mirror." Previous realizations were based on resonant structures that implied narrow bandwidths and large losses. The working principle of our device is ideally frequency-independent, it does not involve resonances and it does ...

Deep ultraviolet DUV avalanche photodetectors APDs based on an AlN /n-SiC Schottky diode structure have been demonstrated. The device with a mesa diameter of 100 m exhibits a gain of 1200 at a reverse bias voltage of −250 V or a field of about 3 MV /cm. The cut-off and peak responsivity wavelengths of these APDs were 210 and 200 nm, respectively. This is the highest optical gain and shortest cu...

An effective defect passivation route has been demonstrated in the rapidly growing Cu2ZnSn(S,Se)4 (CZTSSe) solar cell device system by using Cu2ZnSnS4:Na (CZTS:Na) nanocrystals precursors. CZTS:Na nanocrystals are obtained by sequentially preparing CZTS nanocrystals and surface decorating of Na species, while retaining the kesterite CZTS phase. The exclusive surface presence of amorphous Na spe...

In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunne...

7,7-Bis(1-cyclopropylcarbonylpiperazino)-8,8-dicyanoquinodimethane, a novel thermally stable fluorophore manifested PCE of 2.26%; ∼10 folds improvement than the plain standalone device, finding its suitability in flexible optoelectronic applications.

Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with ...