نتایج جستجو برای: passivation

تعداد نتایج: 3893  

2017
Haibing Huang Jun Lv Yameng Bao Rongwei Xuan Shenghua Sun Sami Sneck Shuo Li Chiara Modanese Hele Savin Aihua Wang Jianhua Zhao

This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition ...

2006
D. Y. Petrovykh M. J. Yang L. J. Whitman

Treatment with ammonium sulfide [(NH4)2Sx] solutions is used to produce model passivated InAs (001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized ...

Journal: :ACS applied materials & interfaces 2016
James Bullock Daisuke Kiriya Nicholas Grant Angelica Azcatl Mark Hettick Teng Kho Pheng Phang Hang C Sio Di Yan Daniel Macdonald Manuel A Quevedo-Lopez Robert M Wallace Andres Cuevas Ali Javey

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the ...

2013
iaoyun Yang Jeffrey Kirsch Jeffrey Fergus Aleksandr Simonian

During the electrochemical analysis or disposal of most of phenolic compounds, insulated polymeric substrates are created and cover the electrode surface. This can cause the signal current to decay over time, which is called electrode fouling or electrode passivation. This paper describes a model based on the potential drop across the fouling layer that is helpful for deeper understanding of th...

Journal: :Physical review letters 2008
Sergey V Levchenko Andrew M Rappe

We present a first-principles density functional theory study predicting the relative thermodynamic stability of ferroelectric lithium niobate (LiNbO3) (0001) surfaces of different stoichiometry. We predict that the equilibrium stoichiometries are different for the positively and negatively polarized LiNbO3 surfaces under the same conditions. Based on the modern theory of polarization, we demon...

2012
Lachlan E. Black Keith R. McIntosh

Related Articles Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface J. Appl. Phys. 111, 093713 (2012) Magnetic properties of ZnO nanoclusters J. Appl. Phys. 111, 084321 (2012) Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding Appl. Phys. Lett. 100, 163120 (2012) N...

A. Parsapour A. Saatchi M. Fathi, M. Mehdikhani M. Salehi

The AISI 316 L Stainless Steel (SS) specimens were exposed to passivation surface through two different processes including; holding in 40-vol% HNO3 at temperature of 60 ºC for 30 min and 15-vol%H2SO4 at ambient temperature for 1 hour. The corrosion behavior of specimens was evaluated in physiological solutions by electrochemical in vitro tests through linear an...

Abbas Behjat, Fatemeh Jafari, Maral Ghoshani, Naimeh torabi,

In this research, the lifetime of green organic light emitting diodes (OLEDs) is studied using four passivation layers. To encapsulate the OLEDs, MgF2, YF3, composed of alternating MgF2/ZnS and YF3/ZnS layers were grown by thermal vacuum deposition. Measurements show that the device lifetime is significantly improved by using YF3 and ZnS as passivation layers. However, diodes encapsulated by Mg...

The relatively low power conversion efficiency (PCE) of quantum dot sensitized solar cells (QDSSCs) is attributed to charge recombination at the interfaces. Charge recombination process could be suppressed by coating the QD layer with a wide band gap semiconductor such as ZnS, which acts as a blocking layer between the QDs and hole transport material (HTM). In present study, to improve PCE of P...

M. Abdeli M. Sohrabi N. Parvini Ahmadi,

In the present work the effects of plasma nitridization on the passivation behavior of AISI 316L was investigated. To do this; nitriding treatments were carried out at 420°C for 1, 2, 4 and 16 hours. The phase composition and structure of the nitrided layer were studied by Low Angle X-ray diffraction and Scanning Electron Microscopy. The hardness of samples also was evaluated by Vickers microha...

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