An effective passivation technique for AlGaN/GaN HEMTs is presented. This technique features ultrathin AlN film grown by atomic layer deposition (ALD). With in-situ remote plasma pretreatment prior to the AlN deposition, atomic sharp interface between ALD-AlN and III-nitride can be obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD...

The deposition of dielectric materials on graphene is one the bottlenecks for unlocking potential in electronic applications. plasma enhanced atomic layer 10 nm thin high quality aluminum oxide (Al2O3) demonstrated using a monolayer hexagonal boron nitride (hBN) as protection layer. Raman spectroscopy performed to analyze possible structural changes lattice caused by deposition. results show th...

Articles you may be interested in Atomic layer deposited high-nanolaminates for silicon surface passivation Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition Appl. Enhancement in the efficiency of light emission from silicon by a thin Al 2 O 3 surface-passivating layer grown by atomic layer deposition at low temperature Enhanced quantum effici...

We present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasm...

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer dep...