Full silicidation ~FUSI! of polysilicon gates promises to be a simple approach for formation of metal gate electrodes for highly scaled complementary metal oxide semiconductor ~CMOS! transistors. Devices have been reported with several different silicides, prominently with nickel. NiSi was shown to produce different work functions, covering a large portion of silicon bandgap, in relation to a d...

Angular electrostatic microactuators suitable for use in a two-stage servo system for magnetic disk drives have been fabricated from molded chemical-vapor-deposited (CVD) polysilicon using the HexSil process. A 2.6-mm-diameter device has been shown to be capable of positioning the read/write elements of a 30% picoslider over a 1m range, with a predicted bandwidth of 2 kHz. The structures are fo...

Polysilicon-on-insulator singly addressable arrays, consisting of double-gated field-emission cells, were fabricated and tested. The field-emission tips were formed by a subtractive technique, using an array of ten polysilicon stripes on the insulating substrate. The stripe structure was oxidized for dielectric isolation and coated with a second polysilicon layer as an extracting gate electrode...

In this paper, we proposed an improved (Indum-Galum-Zinc-Oxide) IGZO-Filler (IF) structure that can be used in a Cell-On-Peri (COP) by improving the excellent erase performance of IGZO-Pillar (IP) structure. The IP mentioned above is announced previous study, and overcomes poor hole carrier characteristics IGZO when channel was early 3D NAND Flash enables operation. showed that, despite very IG...

Accurate characterization of polycrystalline silicon (polysilicon) is not only a critical monitoring technique for chemical vapor deposition (CVD) process control, but also a necessity for gate line-width control in i-line/DUV lithography and dry etching. It requires that the thickness, refractive index and extinction coefficients (from DUV to near red) in polysilicon films be precisely and rap...

Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...

Variations in micromachining processes cause submicron differences in the size of MEMS devices, which leads to frequency scatter in resonators. A new method of compensating for fabrication process variations is to add material to MEMS structures by the selective deposition of polysilicon. It is performed by electrically heating the MEMS in a 25 C silane environment to activate the local decompo...

In this article, the authors report experimental results of the chemical mechanical polishing CMP of silicon dioxide SiO2 and polysilicon to produce nanoscale features with very smooth surfaces. The sizes of the features polished ranged from 30 to 500 nm. For polysilicon polishing, the nanostructures were defined in positive tone e-beam resist and the pattern was transferred to the oxide substr...

The small-signal voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe bipolar junction transistors (BJT’s) at high frequencies are investigated, and simple analytic equations describing the voltage and current distribution in these regions are derived. It is shown that the frequency-dependent debiasing effects in the polysilicon contacts and intri...

This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of subthreshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors having a value of 125 mV/dec and a DIBL of 210 mV/V. The effect of the polysilicon gate etch is invest...