نتایج جستجو برای: post annealing

تعداد نتایج: 429673  

Journal: :Journal of Magnetism and Magnetic Materials 2021

When forming magnetic nanoparticles, the decomposition of organo-metallic precursors causes a reduction Fe(III) to Fe(II) which leads formation an antiferromagnetic rock salt phase FeO. The reduces nanoparticle magnetization, so new method oxidation was developed that can convert FeO rich particles Fe3O4 particles. Iron oxide nanoparticles with different sizes were synthesized validate method. ...

2013
Gurushankar Chandramouly Amy Kwok Bin Huang Nicholas A. Willis Anyong Xie Ralph Scully

BRCA1 controls early steps of the synthesis-dependent strand annealing (SDSA) pathway of homologous recombination, but has no known role following Rad51-mediated synapsis. Here we show that BRCA1 influences post-synaptic homologous recombination events, controlling the balance between short- (STGC) and long-tract gene conversion (LTGC) between sister chromatids. Brca1 mutant cells reveal a bias...

2013
Arun Khalkar Kwang-Soo Lim Seong-Man Yu Shashikant P. Patole Ji-Beom Yoo

Cu 2 ZnSnS 4 (CZTS) thin films were deposited using the cosputtering technique.The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace and sulfurization chamber using H 2 S gas was carried out to optimize the kesterite Cu 2 ZnSnS ...

2014
José E. Alfonso Jhon J. Olaya Claudia M. Bedoya-Hincapié Johann Toudert Rosalia Serna

The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220-250 nm have been successfully gr...

2004
J. A. Garćıa R. Plugaru B. Méndez J. Piqueras T. J. Tate

The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well as spectral changes in the visible and infrared ranges. The main CL emission takes p...

2015
Wen Liu Kevin Cook John Canning

The regeneration of UV-written long period gratings (LPG) in boron-codoped germanosilicate "W" fibre is demonstrated and studied. They survive temperatures over 1000 °C. Compared with regenerated FBGs fabricated in the same type of fibre, the evolution curves of LPGs during regeneration and post-annealing reveal even more detail of glass relaxation. Piece-wise temperature dependence is observed...

2011
Husne Ara Begum Hiroshi Naganuma Mikihiko Oogane Yasuo Ando

The 10 at.% Co-substituted BiFeO₃ films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO₃ (100) substrates with epitaxial relationships of [001](001)Co-BiFeO₃//[001](001)SrTiO₃. In this study, a single phase Co-substituted BiFeO₃ epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O₂ gas pressure, a...

2017
Sujuan Wu Pascal Brault Cong Wang Blandine Courtois

The influence of post deposition annealing (PDA) up to temperatures of TPDA=900°C on the morphology and agglomeration behavior of ambient temperature sputter deposited platinum onto anodic aluminum oxide templates is investigated. Both cluster agglomeration and diffusion processes occur on the surface and on the inner channel walls. When the annealing temperature is less than 400°C, particles a...

2011
C Z Zhao M Werner S Taylor P R Chalker A C Jones Chun Zhao

La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-ann...

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