We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity with bias consists of a decrease in maximum drain current (Imax) caused by a corrosion reaction at the semiconductor surface at the drain side. The decrease in Imax is markedl...

Pseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of the Si template and to show that its magnitude approaches the maximum value for a freestanding me...

The corundum structure is rhombohedral/trigonal and thus has lower symmetry than the well-investigated hexagonal crystals such as wurtzite GaN- ZnO-based materials. By investigating growth of ?-phase ( Al x Ga 1 ? ) 2 O 3 alloy thin films on various orientations Al2O3 substrates, anisotropy around [00.1]-axis investigated. In particular, pseudomorphic r plane (01.2) ? (10.2) substrates compared...

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 3...

The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping AlGaAs barriers and additional digital potential short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For studied heterostructures, introduction significantly, by 30-40%, increases drift velocity overshot when they enter region ...