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The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilutenitride GaAs-based near 1.3-μm lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the ra...

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Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 lm (48 GHz) and 1.55 lm (26 ...

Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteiistics. With proper layout of the nonidentical MQWs, the characteristic temperature ofthe laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30°C to 4OUC...

Voltage, temperature, and intensity dependence of saturable absorption in InGaAs/InP multiple quantum wells are investigated and related to the lasing characteristics of intracavity loss modulated InGaAs/InP quantum well lasers. Bistability in the static laser light output/absorber voltage characteristic arises from the shape of the measured absorption/ voltage/intensity surface of the quantum ...

We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...

A quasi-3 D simulation for quantum well (QW) distributed feedback (DFB) laser diodes is presented. Longitudinal effects such as the nonuniformity of the optical intensity, local gain and spontaneous emission are considered as well as lateral effects such as current spreading and quantum carrier capture. The simulation is performed by solving several 2-D cross-sections using Minilase II and a 1-...

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an...