نتایج جستجو برای: rapid thermal annealing
تعداد نتایج: 537532 فیلتر نتایج به سال:
We have newly applied Rapid Thermal Annealing (RTA) for the post-annealing of mist chemical-vapor-deposition (CVD)-derived Hf1−xZrxO2 (HZO) thin films. A ferroelectric polarization-electric field (P–E) curve was confirmed typically with noticeable polarization reversal currents. These properties HZO films provided quantitative estimation Pr and Ec ∼20 µC/cm2 1–1.5 MV/cm, respectively, compared ...
Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly doped junctions. In this paper, we report some recent investigations focused on this annealing meth...
The use of boron tri-bromide as a source precursor for low energy boron implantation is studied in this work. Details of gas delivery system, beam purity and running performance have been investigated for a 75keV molecular implant to give an equivalent boron energy of 5keV. The behavior of the Br during thermal processing is compared to that of F derived from a BF2 implant and is seen to be les...
We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the atomic-scale using ultrahigh vacuum scanning tunneling microscopy. Low-temperature annealed graphene islands on Cu foil (at ∼430 °C) exhibit predominantly striped Moiré patterns, indicating a relatively weak interaction between graphene and ...
The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 a...
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