نتایج جستجو برای: resistive switching
تعداد نتایج: 80099 فیلتر نتایج به سال:
Highly dense, energy-efficient, and fast neuromorphic architectures emulating the computational abilities of brain use memristors to emulate synapses in analog or digital systems. Core–shell nanowires provide us with new opportunities for hardware integration. In this work, we have fabricated core–shell using a combination bottom-up top-down techniques. Additionally, demonstrated eightwise coun...
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW-based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves th...
A detailed understanding of the resistive switching mechanisms that operate in redox-based resistive random-access memories (ReRAM) is key to controlling these memristive devices and formulating appropriate design rules. Based on distinct fundamental switching mechanisms, two types of ReRAM have emerged: electrochemical metallization memories, in which the mobile species is thought to be metal ...
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