The subject of this paper is a Jacobian, introduced by F. Lazzeri (unpublished), associated to every compact oriented riemannian manifold whose dimension is twice an odd number. We start the investigation of Torelli type problems and Schottky type problems for Lazzeri’s Jacobian; in particular we examine the case of tori with flat metrics. Besides we study Lazzeri’s Jacobian for Kähler manifold...

1.1. It is well known that a general plane curve of degree d has 12d(d − 2)(d − 9) distinct bitangent lines. The first (and most) interesting case is that of a smooth plane quartic X , whose configuration of 28 bitangents we shall denote by θ(X), to highlight the correspondence with the odd theta-characteristics of X . The properties of θ(X) have been extensively studied by the classical geomet...

We study a complex 3-dimensional family of classical Schottky groups of genus 2 as monodromy groups of the hypergeometric equation. We find nontrivial loops in the deformation space; these correspond to continuous integer-shifts of the parameters of the equation.

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-re...

We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemp...

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measuremen...

Li Song,*,† Alexander W. Holleitner,‡ Huihong Qian,§ Achim Hartschuh,§ Markus Döblinger,§ Eva M. Weig,† and Jörg P. Kotthaus† Center for NanoScience (CeNS) und Fakultät für Physik, Ludwig-Maximilians-UniVersität, Geschwister-Scholl-Platz 1, 80539 Munich, Germany, Walter Schottky Institut (WSI), Technische UniVersität München, Am Coulombwall 3, 85748 Munich, Germany, and Department Chemie und Bi...

Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States; California Institute of Technology, Pasadena, California, 91125, United States, Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125, United States, and Institute for Molecular Engineering, The University of Chicago, 5801 South...

in this research work, alpha particle detector is made using semi-insulating gaas. a surface barrier detector with a semi-insulating gaas substrate at room temperature with pressure of 10-4 torr under -particle radiation with 5.48 mev of am241 source, have been under investigation. energy resolution of 2 and 3 mm schottky diameter have been matured and compared with the effect of voltage varia...