We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

The retrosection theorem says that any hyperbolic or Riemann surface can be uniformized by a Schottky group. We generalize this theorem to the case of hyperbolic 2-orbifolds by giving necessary and sufficient conditions for a hyperbolic 2-orbifold, in terms of its signature, to admit a uniformization by a Kleinian group which is a finite extension of a Schottky group. Equivalent^, the condition...

The mechanism responsible of the Schottky barrier formation is anaiysed by considering a monolayer deposition of Li. Na or K on GaAs(ll0). These cases are studied by means of a free parameter consistent molecular orbital method. Che~so~tion energies. adsorption sites and Schottky barrier heights are calculated and found to be in good agreement with the experimental evidence. Our results tend to...

We investigate numerically the collision of nonlinear envelope pulses in composite rightand left-handed transmission lines with regularly spaced Schottky varactors. Because of the nonlinearity caused by the Schottky varactors, the dispersive distortion of envelope pulses is well compensated. We find that when two nonlinear envelope pulses traveling in the opposite directions collide, two envelo...

Present work is an effort to reveal the junction properties of gold (Au) / Zinc oxide (ZnO) nanorods based Schottky diode by using the frequency dependent electrical properties. The most important electrical parameters such as conductance (G), resistance (R), capacitance (C) and impedance (Z) were studied as function of frequency across the series of AC voltages. Moreover, current density-volta...

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the...

In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optica...

Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focus here on Schottky barrier CNTFETs which operate by modulating the transmission coefficient of carriers through the Schottky barriers at the interf...

This paper focused on the characterization of electrochemical behavior of a martensitic stainless steel in the acidic solutions. For this purpose, electrochemical parameters were derived from potentiodynamic polarization, Mott Schottky analysis and electrochemical impedance spectroscopy (EIS) techniques. The potentiodynamic polarization results showed that corrosion current density of AISI 420 ...