نتایج جستجو برای: semiconducting material

تعداد نتایج: 368761  

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2013
Haotian Wang Zhiyi Lu Shicheng Xu Desheng Kong Judy J Cha Guangyuan Zheng Po-Chun Hsu Kai Yan David Bradshaw Fritz B Prinz Yi Cui

The ability to intercalate guest species into the van der Waals gap of 2D layered materials affords the opportunity to engineer the electronic structures for a variety of applications. Here we demonstrate the continuous tuning of layer vertically aligned MoS2 nanofilms through electrochemical intercalation of Li(+) ions. By scanning the Li intercalation potential from high to low, we have gaine...

2006
Nadezhda Kiselyova

In this paper the main problems for computer design of materials, which would have predefined properties, with the use of artificial intelligence methods are presented. The DB on inorganic compound properties and the system of DBs on materials for electronics with completely assessed information: phase diagram DB of material systems with semiconducting phases and DB on acousto-optical, electro-...

2007
Björn Birnir Niklas Wellander

A model for a semiconducting ceramic material used in devices to protect electrical equipment against overvoltages is presented. The fine structure in the material induces highly oscillating coefficients in the Maxwell equation. Maxwell equations are homogenized to obtain a coupled system. The fine scales in the model yield a local problem coupled with the homogenized Maxwell’s equations. In th...

Journal: :Physical chemistry chemical physics : PCCP 2016
Christopher J Wood Gareth H Summers Charlotte A Clark Nicolas Kaeffer Maximilian Braeutigam Lea Roberta Carbone Luca D'Amario Ke Fan Yoann Farré Stéphanie Narbey Frédéric Oswald Lee A Stevens Christopher D J Parmenter Michael W Fay Alessandro La Torre Colin E Snape Benjamin Dietzek Danilo Dini Leif Hammarström Yann Pellegrin Fabrice Odobel Licheng Sun Vincent Artero Elizabeth A Gibson

We investigated a range of different mesoporous NiO electrodes prepared by different research groups and private firms in Europe to determine the parameters which influence good quality photoelectrochemical devices. This benchmarking study aims to solve some of the discrepancies in the literature regarding the performance of p-DSCs due to differences in the quality of the device fabrication. Th...

2015
Kainen L. Utt Pablo Rivero Mehrshad Mehboudi Edmund O. Harriss Mario F. Borunda Alejandro A. Pacheco SanJuan Salvador Barraza-Lopez

Black phosphorus is a monatomic semiconducting layered material that degrades exothermically in the presence of light and ambient contaminants. Its degradation dynamics remain largely unknown. Even before degradation, local-probe studies indicate non-negligible local curvature-through a nonconstant height distribution-due to the unavoidable presence of intrinsic defects. We establish that these...

2018
Yiqun Yang Jun Li

TiO2, a photosensitive semiconducting material, has been widely reported as a good photoanode material in dye-sensitized solar cells and new emerging perovskite cells. Its proper electronic band structure, surface chemistry and hydrophilic nature provide a reactive surface for interfacing with different organic and inorganic photon capturing materials in photovoltaics. Here, we review its enabl...

Journal: :physica status solidi (a) 2014

Journal: :Carbon trends 2022

The transition between gapped (semiconducting) and gapless (metallic) phases tunability of bandgap in materials is a very lucrative yet considerably challenging goal for new-age device preparation. For bulk two-dimensional layered systems, this rapidly expanding field. We theoretically propose one-dimensional pure carbon material with tunable bandgap. find that two parallel coupled polyyne chai...

2012
Md Shamsul Arefin

This work presents a technique for the chirality (n, m) assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n, m) with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are ...

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