Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important chal...

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

Neareld optical microscopy and spectroscopy is emerging as a powerful tool for the investigation of semiconductor structures. Tunable excitation combined with subwavelength resolution is providing an unprecedented level of detail on the local optical properties of semiconductor structures. Recent neareld optical studies have addressed issues of laser diode mode pro ling, minority carrier transp...

Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ...

This Feature Article provides a brief overview of the latest development and emerging new synthesis solution strategies for II–VI semiconducting nanomaterials and inorganic-organic semiconductor hybrid materials. Research on the synthesis of II–VI semiconductor nanomaterials and inorganic–organic hybrid semiconducting materials via solution strategies has made great progress in the past few yea...

We have calculated the exchange interaction between electrons in the accumulation electron layer in the semiconductor near the interface and electrons in the ferromagnet in the ferromagnet/semiconductor heterostructure. It is found that the exchange interaction forms the potential barrier for spin-polarized electrons. The barrier height strongly depends on the difference of chemical potentials ...

In this work we will introduce quantum dots, wires and wells as nanostructure objects with different dimensionality. We will demonstrate the effect of applied external static electric field on the example of semiconductor quantum wells and the appearance of Stark effect. We will briefly allude to some of the optoelectronic devices using Stark effect. The influence of quantum well concentration ...